Efficient physics-based compact model for the Schottky barrier carbon nanotube FET

被引：3

作者：

Najari, Montassar ^{[1
,2
]}

Fregonese, Sebastien ^{[1
]}

Maneux, Cristell ^{[1
]}

Mnif, Hassene ^{[2
]}

Zimmer, Thomas ^{[1
]}

Masmoudi, Nouri ^{[2
]}

机构：

[1] Univ Bordeaux 1, IMS Lab, CNRS, UMR 5218, 351 Cours Liberat, F-33405 Talence, France

[2] Univ Sfax, LETI Lab, Sfax 3038, Tunisia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 11-12 | 2010年 / 7卷 / 11-12期

关键词：

carbon nanotubes; Schottky barrier; field-effect transistor; modeling;

D O I：

10.1002/pssc.200983825

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents a computationally efficient physics-based compact model for the Schottky barrier CNTFET. This compact model captured a number of features exhibited by these transistors such as ballistic transport and channel potential variation with respect to channel charge. Also quantum capacitance is pointed out. A new analytical model of the channel charge is presented here. The compact model accuracy is verified within its range of validity. To investigate on the SB influence, two classical circuit applications are simulated; the logical inverter and the 5 stages ring oscillator. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2624 / 2627

页数：4

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