Room temperature electrical spin injection in remanence

被引：54

作者：

Hoevel, S. ^{[1
]}

Gerhardt, N. C. ^{[1
]}

Hofmann, M. R. ^{[1
]}

Lo, F. -Y. ^{[2
]}

Ludwig, A. ^{[2
]}

Reuter, D. ^{[2
]}

Wieck, A. D. ^{[2
]}

Schuster, E. ^{[3
]}

Wende, H. ^{[3
]}

Keune, W. ^{[3
]}

Petracic, O. ^{[4
]}

Westerholt, K. ^{[4
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Photon & Terahertztechnol, D-44780 Bochum, Germany

[2] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

[3] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany

[4] Ruhr Univ Bochum, Inst Expt Phys Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature. (C) 2008 American Institute of Physics.

引用

页数：3

共 23 条

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