Room temperature electrical spin injection in remanence

被引：53
作者：
Hoevel, S. [1 ]
Gerhardt, N. C. [1 ]
Hofmann, M. R. [1 ]
Lo, F. -Y. [2 ]
Ludwig, A. [2 ]
Reuter, D. [2 ]
Wieck, A. D. [2 ]
Schuster, E. [3 ]
Wende, H. [3 ]
Keune, W. [3 ]
Petracic, O. [4 ]
Westerholt, K. [4 ]
机构：
[1] Ruhr Univ Bochum, Lehrstuhl Photon & Terahertztechnol, D-44780 Bochum, Germany
[2] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany
[3] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany
[4] Ruhr Univ Bochum, Inst Expt Phys Festkorperphys, D-44780 Bochum, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2957469
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 23 条
  • [1] Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures
    Adelmann, C.
    Hilton, J. L.
    Schultz, B. D.
    McKernan, S.
    Palmstrom, C. J.
    Lou, X.
    Chiang, H. -S.
    Crowell, P. A.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [2] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [3] Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts
    Gerhardt, NC
    Hövel, S
    Brenner, C
    Hofmann, MR
    Lo, FY
    Reuter, D
    Wieck, AD
    Schuster, E
    Keune, W
    Halm, S
    Bacher, G
    Westerholt, K
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (07)
  • [4] Electron spin injection into GaAs from ferromagnetic contacts in remanence -: art. no. 032502
    Gerhardt, NC
    Hövel, S
    Brenner, C
    Hofmann, MR
    Lo, FY
    Reuter, D
    Wieck, AD
    Schuster, E
    Keune, W
    Westerholt, K
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (03)
  • [5] Manifestation of coherent spin precession in stimulated semiconductor emission dynamics
    Hallstein, S
    Berger, JD
    Hilpert, M
    Schneider, HC
    Ruhle, WW
    Jahnke, F
    Koch, SW
    Gibbs, HM
    Khitrova, G
    Oestreich, M
    [J]. PHYSICAL REVIEW B, 1997, 56 (12) : R7076 - R7079
  • [6] Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
    Hanbicki, AT
    Jonker, BT
    Itskos, G
    Kioseoglou, G
    Petrou, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1240 - 1242
  • [7] Electrical detection of photoinduced spins both at room temperature and in remanence
    Hoevel, S.
    Gerhardt, N. C.
    Hofmann, M. R.
    Lo, F. -Y.
    Reuter, D.
    Wieck, A. D.
    Schuster, E.
    Keune, W.
    Wende, H.
    Petracic, O.
    Westerholt, K.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (24)
  • [8] Optical spin manipulation of electrically pumped vertical-cavity surface-emitting lasers
    Hoevel, S.
    Bischoff, A.
    Gerhardt, N. C.
    Hofmann, M. R.
    Ackemann, T.
    Kroner, A.
    Michalzik, R.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [9] Electrical spin injection and threshold reduction in a semiconductor laser
    Holub, M.
    Shin, J.
    Saha, D.
    Bhattacharya, P.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (14)
  • [10] Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)
    Jiang, X
    Wang, R
    Shelby, RM
    Macfarlane, RM
    Bank, SR
    Harris, JS
    Parkin, SSP
    [J]. PHYSICAL REVIEW LETTERS, 2005, 94 (05)
123