Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

被引：54

作者：

Xiang, Ping-Hua ^{[1
,2
]}

Asanuma, Shutaro ^{[1
,2
]}

Yamada, Hiroyuki ^{[1
]}

Inoue, Isao H. ^{[1
]}

Sato, Hiroshi ^{[1
]}

Akoh, Hiroshi ^{[1
,2
]}

Sawa, Akihito ^{[1
]}

Ueno, Kazunori ^{[3
,4
]}

Yuan, Hongtao ^{[5
,6
]}

Shimotani, Hidekazu ^{[5
,6
]}

Kawasaki, Masashi ^{[5
,6
,7
]}

Iwasa, Yoshihiro ^{[5
,6
,7
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Dept Basic Sci, Tokyo 1538902, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[5] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[7] RIKEN, CERG, Wako, Saitama 3510198, Japan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 48期

关键词：

correlated electron oxides; phase diagram; metal-insulator transition; field-effect transistors; FIELD-EFFECT TRANSISTOR; METAL-INSULATOR-TRANSITION; SUPERCONDUCTIVITY; MAGNETORESISTANCE; TEMPERATURE; PERFORMANCE; SYSTEMS; FILMS;

D O I：

10.1002/adma.201102968

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

引用

页码：5822 / +

页数：7

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