A Multiresolution Time Domain (MRTD) Method for Crosstalk Noise Modeling of CMOS-Gate-Driven Coupled MWCNT Interconnects

被引:5
|
作者
Rebelli, Shashank [1 ]
Nistala, Bheema Rao [1 ]
机构
[1] Natl Inst Technol, Dept Elect & Commun Engn, Warangal, Andhra Pradesh, India
关键词
Semiconductor device modeling; Time-domain analysis; Finite difference methods; Crosstalk; Analytical models; Numerical models; Integrated circuit interconnections; Complementary metal-oxide semiconductor (CMOS); crosstalk; finite-difference time-domain (FDTD); HSPICE; multiresolution time-domain (MRTD); multi-walled carbon nanotube (MWCNT); NEXT-GENERATION INTERCONNECTS; CARBON NANOTUBE; TRANSIENT ANALYSIS; DISPERSION; DELAY;
D O I
10.1109/TEMC.2019.2903728
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the multiresolution time domain (MRTD) method with its unique features is tailored for modeling interconnects. To build further credence to this and its profound existence in the recent state-of-the-art, simulations for inclusive crosstalk noise, on complementary metal-oxide semiconductor gate-driven mutually coupled multi-walled carbon nanotube interconnect lines, using MRTD method and conventional finite-difference time-domain (FDTD) model for 32-nm technology are executed. The results demonstrate the dominance of MRTD model over conventional FDTD in terms of accuracy with respect to recursive simulations of Synopsys HSPICE tool. An average error of less than 0.2% is observed in the estimation of dynamic crosstalk noise analysis. The proposed method is used to model interconnects with two and three mutually coupled lines and can be extended for N-coupled lines. The results of the transient analysis prove the efficiency of MRTD method over HSPICE with respect to computational time. The proposed method can also be used to address the issues of electromagnetic compatibility and electromagnetic interference of on-chip interconnects.
引用
收藏
页码:521 / 531
页数:11
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