2-D Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors

被引：2

作者：

Matsuki, Kuniaki ^{[1
]}

Saito, Ryusuke ^{[1
]}

Tsukamoto, Shuji ^{[1
]}

Kimura, Mutsumi ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Shiga 5202194, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2011年 / 24卷 / 03期

关键词：

2-D simulator; laser crystallization; polycrystalline-silicon (poly-Si); thin-film transistor (TFT); EXPLOSIVE CRYSTALLIZATION; LATERAL-CRYSTALLIZATION; PULSE DURATION; GROWTH; FIELD;

D O I：

10.1109/TSM.2011.2154368

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A 2-D simulator of laser crystallization is proposed as a practical evaluation tool for polycrystalline-silicon thin-film transistors. Random nucleation, crystal growth velocity, latent heat emission, and partial crystallization are modeled to simulate crystallization processes from supercooling phases. Grain sizes are reproduced as a function of substrate temperature during laser crystallization. It is found that the grain size increases as the substrate temperature rises because of the suppression of the nucleation.

引用

页码：472 / 476

页数：5

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