First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 x 1) Polar Terminations

被引:13
作者
Chen, Hong [1 ]
Ding, Yi-hong [1 ]
Yu, Hai-tao [2 ,3 ]
Xie, Ying [3 ]
机构
[1] Jilin Univ, Inst Theoret Chem, State Key Lab Theoret & Computat Chem, Changchun 130023, Peoples R China
[2] Heilongjiang Univ, Minist Educ, Key Lab Funct Inorgan Mat Chem, Harbin 150080, Peoples R China
[3] Heilongjiang Univ, Sch Chem & Mat Sci, Harbin 150080, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILMS; DIELECTRIC-PROPERTIES; EPITAXIAL-GROWTH; STRUCTURAL-PROPERTIES; MOLECULAR-DYNAMICS; AMORPHOUS LAALO3; AB-INITIO; SURFACE; SI(100); SRTIO3;
D O I
10.1021/acs.jpcc.5b01282
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The first-principles thermodynamics characterization of the stabilities and electronic properties of the LaAlO3 (001) and (110) polar surfaces was systematically performed using density functional theory methods. Two types of polar surfaces, including the terminations along the (001) orientation (the LaO- and AlO2-terminated surfaces) and the (110) orientation (the LaAlO-, O-2-, La-, AlO-, and O-terminated surfaces), were considered in this study. The computational results of the charge redistributions and geometries confirm that the electronic structure change and surface reconstruction should be responsible for the cancellation of the macroscopic dipole moments of these polar terminations, which stabilizes them. The charge neutralization can also be achieved by the charge redistribution of surface atoms. Furthermore, using the surface grand potential method in which the effect of the chemical environment on surface stability is considered, we constructed the stability phase diagram of the LaAlO3 (001) and (110) polar surfaces. The results indicate that only the O (110), LaO (001), and AlO2 (001) terminations have corresponding stability domains and can be considered targets in further experimental investigations.
引用
收藏
页码:9364 / 9374
页数:11
相关论文
共 73 条
[1]  
Alexander A. M., 2000, CHEM VAPOR DEPOS, V6, P133
[2]  
[Anonymous], 2010, INT TECHNOLOGY ROADM
[3]   Epitaxial silicon and germanium on buried insulator heterostructures and devices [J].
Bojarczuk, NA ;
Copel, M ;
Guha, S ;
Narayanan, V ;
Preisler, EJ ;
Ross, FM ;
Shang, H .
APPLIED PHYSICS LETTERS, 2003, 83 (26) :5443-5445
[4]   Stability and electronic structure of the (1X1) SrTiO3 (110) polar surfaces by first-principles calculations -: art. no. 035418 [J].
Bottin, F ;
Finocchi, F ;
Noguera, C .
PHYSICAL REVIEW B, 2003, 68 (03)
[5]  
Cabanas MV, 1997, SOLID STATE IONICS, V101, P191, DOI 10.1016/S0167-2738(97)00274-9
[6]   Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation [J].
Cha, Seung-Yong ;
Kim, Hyo-June ;
Choi, Doo-Jin .
JOURNAL OF MATERIALS SCIENCE, 2010, 45 (19) :5223-5227
[7]   A first-principles investigation of the stabilities and electronic properties of SrZrO3 (110) (1 x 1) polar terminations [J].
Chen, Hong ;
Xie, Ying ;
Zhang, Guo-xu ;
Yu, Hai-tao .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2014, 26 (39)
[8]   Dielectric properties and long-wavelength optical modes of the high-κ oxide LaAlO3 -: art. no. 134302 [J].
Delugas, P ;
Fiorentini, V ;
Filippetti, A .
PHYSICAL REVIEW B, 2005, 71 (13)
[9]   LaALO3 films prepared by MBE on LaAlO3(001) and Si(001) substrates [J].
Gaillard, S ;
Rozier, Y ;
Merckling, C ;
Ducroquet, F ;
Gendry, M ;
Hollinger, G .
MICROELECTRONIC ENGINEERING, 2005, 80 :146-149
[10]   Polarity of oxide surfaces and nanostructures [J].
Goniakowski, Jacek ;
Finocchi, Fabio ;
Noguera, Claudine .
REPORTS ON PROGRESS IN PHYSICS, 2008, 71 (01)