Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

被引：80

作者：

Dlubak, B. ^{[1
]}

Kidambi, P. R. ^{[1
]}

Weatherup, R. S. ^{[1
]}

Hofmann, S. ^{[1
]}

Robertson, J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

基金：

欧洲研究理事会; 美国国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

MOLECULES;

D O I：

10.1063/1.4707376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4707376]

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页数：4

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