High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

被引：26

作者：

Socol, G. ^{[1
]}

Craciun, D. ^{[1
]}

Mihailescu, I. N. ^{[1
]}

Stefan, N. ^{[1
]}

Besleaga, C. ^{[2
]}

Ion, L. ^{[2
]}

Antohe, S. ^{[2
]}

Kim, K. W. ^{[3
]}

Norton, D. ^{[3
]}

Pearton, S. J. ^{[3
]}

Galca, A. C. ^{[4
]}

Craciun, V. ^{[1
,3
]}

机构：

[1] Natl Inst Lasers Plasma & Radiat Phys, Magurele, Ilfov, Romania

[2] Univ Bucharest, Fac Phys, Magurele Ilfov 077125, Romania

[3] Univ Florida, Gainesville, FL USA

[4] Natl Inst Mat Phys, Magurele, Ilfov, Romania

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 04期

关键词：

Amorphous indium zinc oxide; Transparent conductive oxide; Pulsed laser deposition; Thin films; STRUCTURAL INVESTIGATIONS; ELECTRICAL-PROPERTIES; ZNO; CRYSTALLINE; LAYERS;

D O I：

10.1016/j.tsf.2011.04.196

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium zinc oxide films were grown from targets with two different In atomic concentration [In/(In+Zn)] of 40% and 80% by the pulsed laser deposition technique on glass substrates from room temperature up to 100 degrees C. X-ray diffraction and reflectometry investigations showed that films were amorphous and dense. Thin films (thickness<100 nm) exhibited higher optical transmittance and resistivities than thick films (thickness>1000 nm), probably caused by a significant decrease of oxygen vacancies due to atmosphere exposure. Films deposited from the In rich target under an oxygen pressure of 1 Pa exhibited optical transmittance higher than 85%, resistivities around 5-7x10(-4) Omega cm and mobilities in the 47-54 cm(2)/V s range. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：1274 / 1277

页数：4

共 25 条

[1] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA ;

KINSBRON, E .

PHYSICAL REVIEW B, 1984, 29 (02) :768-779

[2] ITO deposited by pyrosol for photovoltaic applications [J].

Chebotareva, A. B. ;

Untila, G. G. ;

Kost, T. N. ;

Jorgensen, S. ;

Ulyashin, A. G. .

THIN SOLID FILMS, 2007, 515 (24) :8505-8510

[3] Structural investigations of InZnO films grown by pulsed laser deposition technique [J].

Craciun, Doina ;

Socol, Gabriel ;

Stefan, Nicolaie ;

Miroiu, Marimona ;

Craciun, Valentin .

THIN SOLID FILMS, 2010, 518 (16) :4564-4567

[4] Structural investigations of ITO-ZnO films grown by the combinatorial pulsed laser deposition technique [J].

Craciun, Doina ;

Socol, Gabriel ;

Stefan, Nicolaie ;

Miroiu, Marimona ;

Mihailescu, Ion N. ;

Galca, Aurelian-Catalin ;

Craciun, Valentin .

APPLIED SURFACE SCIENCE, 2009, 255 (10) :5288-5291

[5] Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition [J].

Craciun, V ;

Craciun, D ;

Chen, Z ;

Hwang, J ;

Singh, RK .

APPLIED SURFACE SCIENCE, 2000, 168 (1-4) :118-122

[6] Effect of indium dopant on surface and mechanical characteristics of ZnO : In nanostructured films [J].

Fang, Te-Hua ;

Kang, Shao-Hui .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (24)

[7]

FUHS W, 1986, PLASMA DEPOSITED THI, P45

[8] Optical properties of zinc oxide thin films doped with aluminum and lithium [J].

Galca, A. C. ;

Secu, M. ;

Vlad, A. ;

Pedarnig, J. D. .

THIN SOLID FILMS, 2010, 518 (16) :4603-4606

[9] On the structural, morphological, optical and electrical properties of sol-gel deposited ZnO In films [J].

Girtan, M. ;

Socol, M. ;

Pattier, B. ;

Sylla, M. ;

Stanculescu, A. .

THIN SOLID FILMS, 2010, 519 (02) :573-577

[10] A spectroscopic ellipsometry study on the variation of the optical constants of tin-doped indium oxide thin films during crystallization [J].

Jung, YS .

SOLID STATE COMMUNICATIONS, 2004, 129 (08) :491-495

← 1 2 3 →