Optical investigation of type IIGaSb/GaAs self-assembled quantum dots

被引：78

作者：

Alonso-Alvarez, Diego ^{[1
]}

Alen, Benito ^{[1
]}

Garcia, Jorge M. ^{[1
]}

Ripalda, Jose M. ^{[1
]}

机构：

[1] PTM, CNM CSIC, Inst Microelect Madrid, Madrid 28760, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

关键词：

D O I：

10.1063/1.2827582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be similar to 500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system. (c) 2007 American Institute of Physics.

引用

页数：3

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