Epitaxial growth of CeO2(1 0 0) films on Si(1 0 0) substrates by dual ion beams reactive sputtering

被引：20

作者：

Kang, JF ^{[1
]}

Xiong, GC

Lian, GJ

Wang, YY

Han, RQ

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 04期

关键词：

insulators; thin films; epitaxy; X-ray spectroscopies;

D O I：

10.1016/S0038-1098(98)00353-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The epitaxial growth of CeO2(100) films on (100) silicon substrates by dual ion beams sputtering was studied. The measurements of X-ray theta-2 theta pattern, phi-scan and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (100) orientation. The experiments showed that the substrate temperature had only a weak influence on the orientation in a wide temperature range. In contrast to this, the oxygen pressure during the deposition had a strong influence on the growth. (C) 1998 Published by Elsevier Science Ltd.

引用

页码：225 / 227

页数：3

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