The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect. (C) 2005 American Institute of Physics.
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Nichols, JA
;
Gundlach, DJ
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机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
;
Jackson, TN
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h-index: 0
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Nichols, JA
;
Gundlach, DJ
论文数: 0引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
Gundlach, DJ
;
Jackson, TN
论文数: 0引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA