Mechanical force sensors using organic thin-film transistors -: art. no. 093708

被引:82
作者
Darlinski, G [1 ]
Böttger, U
Waser, R
Klauk, H
Halik, M
Zschieschang, U
Schmid, G
Dehm, C
机构
[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany
[2] Infineon Technol, Mat & Technol, New Memory Platforms, D-91052 Erlangen, Germany
关键词
D O I
10.1063/1.1888046
中图分类号
O59 [应用物理学];
学科分类号
摘要
The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect. (C) 2005 American Institute of Physics.
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页数:4
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