Compact double-side liquid-impingement-cooled integrated power electronic module

被引:30
作者
Johnson, C. M. [1 ]
Buttay, C. [1 ]
Rashid, S. J. [2 ]
Udrea, F. [2 ]
Amaratunga, G. A. J. [2 ]
Ireland, P. [3 ]
Malhan, R. K. [4 ]
机构
[1] Univ Nottingham, Sch Elect & Elect Engn, Univ Pk, Nottingham NG7 2RD, England
[2] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
[3] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England
[4] DENSO CORP, Res Lab, Aichi 4700111, Japan
来源
PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1109/ISPSD.2007.4294930
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a compact integrated power electronic module (IPEM) which seeks to overcome the volumetric power density limitations of conventional packaging technologies. A key innovation has been the development of a substrate sandwich structure which permits double side cooling of the embedded dies whilst controlling the mechanical stresses both within the module and at the heat exchanger interface. A 3-phase inverter module has been developed, integrating the sandwich structures with high efficiency impingement coolers, dc-link capacitance and gate drive units. Full details of the IPEM construction and electrical evaluation are given in the paper.
引用
收藏
页码:53 / +
页数:2
相关论文
共 6 条
[1]   Three-dimensional packaging for power semiconductor devices and modules [J].
Calata, JN ;
Bai, JG ;
Liu, XS ;
Wen, SH ;
Lu, GQ .
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (03) :404-412
[2]   Double-sided cooling for high power IGBT modules using flip chip technology [J].
Gillot, C ;
Schaeffer, C ;
Massit, C ;
Meysenc, L .
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2001, 24 (04) :698-704
[3]   The future of electronics in automobiles [J].
Kassakian, JG ;
Perreault, DJ .
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, :15-19
[4]  
Martin C, 2004, IEEE IND APPLIC SOC, P1519
[5]  
ROUDET J, 1999, IMPORTANCE INTERCONN, V2
[6]  
Thébaud JM, 2000, IEEE POWER ELECTRON, P1285, DOI 10.1109/PESC.2000.880495