Green and red emissions at room temperature on Er-doped GaN submicrometer rods synthesized by a simple chemical vapor deposition technique

被引：7

作者：

Carvajal, Joan J. ^{[1
]}

Aguilo, Magdalena ^{[2
]}

Diaz, Francesc ^{[2
]}

Rojo, J. Carlos ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[2] Univ Rovira & Virgili, FiCMA, Tarragona 43007, Spain

来源：

CHEMISTRY OF MATERIALS | 2007年 / 19卷 / 26期

关键词：

D O I：

10.1021/cm702441y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the semiconductor have been recorded.

引用

页码：6543 / 6547

页数：5

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