Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation

被引:0
作者
Xu, Zhengyu [1 ]
Usami, Koichi [1 ]
Simanullang, Marolop [1 ]
Noguchi, Tomohiro [1 ]
Kawano, Yukio [1 ]
Oda, Shunri [1 ]
机构
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
关键词
CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; EUTECTIC TEMPERATURE; GE NANOWIRES; SI;
D O I
10.7567/JJAP.55.085002
中图分类号
O59 [应用物理学];
学科分类号
摘要
Germanium nanowires (Ge NWs) grown at high temperatures (HTs) are investigated because of the demand for impurity doping. However, gold agglomeration, which occurs at HTs, results in undesired moundlike structures. A two-step growth technique with temperature modulation from low temperatures (LTs) to HTs was adopted to prevent gold agglomeration, thus revealing high-yield HT Ge NWs on top of LT Ge NWs. These Ge NWs can be classified into two groups on the basis of their shape. The timing of gold migration plays a crucial role in determining the shape of these NWs. Fat core-shell-like Ge NWs, where gold migration occurs as temperature increases, are due to the enhanced radial growth at HTs generated from the migrated gold nanoparticles on the NW sidewalls. However, for thin NWs, because Au seeds were stabilized on top of NWs until synthesis ended, the axial growth of Ge NWs continued at HTs. (C) 2016 The Japan Society of Applied Physics
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页数:4
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共 31 条
[1]   Vapor-liquid-solid growth of small- and uniform-diameter silicon nanowires at low temperature from Si2H6 [J].
Akhtar, Saeed ;
Usami, Koichi ;
Tsuchiya, Yoshishige ;
Mizuta, Hiroshi ;
Oda, Shunri .
APPLIED PHYSICS EXPRESS, 2008, 1 (01)
[2]  
Compressed Gas Association, 1999, HDB COMPR GAS, P575
[3]   Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor-Liquid-Solid-Grown Nanowires [J].
Connell, Justin G. ;
Yoon, KunHo ;
Perea, Daniel E. ;
Schwalbach, Edwin J. ;
Voorhees, Peter W. ;
Lauhon, Lincoln J. .
NANO LETTERS, 2013, 13 (01) :199-206
[4]   Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species [J].
Cui, Y ;
Wei, QQ ;
Park, HK ;
Lieber, CM .
SCIENCE, 2001, 293 (5533) :1289-1292
[5]   Growth, Defect Formation, and Morphology Control of Germanium-Silicon Semiconductor Nanowire Heterostructures [J].
Dayeh, Shadi A. ;
Wang, Jian ;
Li, Nan ;
Huang, Jian Yu ;
Gin, Aaron V. ;
Picraux, S. Thomas .
NANO LETTERS, 2011, 11 (10) :4200-4206
[6]   Advanced core/multishell germanium/silicon nanowire heterostructures: The Au-diffusion bottleneck [J].
Dayeh, Shadi A. ;
Mack, Nathan H. ;
Huang, Jian Yu ;
Picraux, S. T. .
APPLIED PHYSICS LETTERS, 2011, 99 (02)
[7]   Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth [J].
Dayeh, Shadi A. ;
Picraux, S. T. .
NANO LETTERS, 2010, 10 (10) :4032-4039
[8]   Control of gold surface diffusion on Si nanowires [J].
den Hertog, Martien I. ;
Rouviere, Jean-Luc ;
Dhalluin, Florian ;
Desre, Pierre J. ;
Gentile, Pascal ;
Ferret, Pierre ;
Oehler, Fabrice ;
Baron, Thiery .
NANO LETTERS, 2008, 8 (05) :1544-1550
[9]   Doping and characterization of impurity atoms in Si and Ge nanowires [J].
Fukata, Naoki .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, 2014, 11 (02) :320-330
[10]   Characterization of Impurity Doping and Stress in Si/Ge and Ge/Si Core-Shell Nanowires [J].
Fukata, Naoki ;
Mitome, Masanori ;
Sekiguchi, Takashi ;
Bando, Yoshio ;
Kirkham, Melanie ;
Hong, Jung-Il ;
Wang, Zhong Lin ;
Snydert, Robert L. .
ACS NANO, 2012, 6 (10) :8887-8895