Electrically Tunable High-Quality Factor Silicon Microring Resonator Gated by High Mobility Conductive Oxide

Silicon microring resonators play pivotal roles in photonic integration circuits due to the advantages of low power consumption, high bandwidth, and ultracompact size. However, silicon microring resonators also face great challenges to control the working wavelength due to fabrication errors and temperature variation. In this work, we demonstrate an electrically tunable silicon microring resonator driven by a titanium-doped indium oxide/hafnium oxide/silicon metal-oxide-semiconductor capacitor, achieving a high electro-optic tuning efficiency of 130 pm/V with a high quality factor between 11900 and 4700. The high electro-optic tuning efficiency can be used to compensate for the drift of resonance wavelength induced by temperature fluctuation up to 12 K with an extremely low power consumption of 11 pW/nm, which is superior to the conventional thermal tuning.