Mechanical and magneto-opto-electronic investigation of transition metal based fluoro-perovskites: An ab-initio DFT study

被引:26
|
作者
Erum, Nazia [1 ]
Iqbal, Muhammad Azhar [1 ,2 ]
机构
[1] Univ Punjab, Phys Dept, Quaid E Azam Campus,POB 54590, Lahore, Pakistan
[2] Univ Management & Technol, Sch Sci, Johar Town Campus,POB 54770, Lahore, Pakistan
关键词
First-principles study; Fluoro-perovskites; Mechanical property; Magneto-electronic property; Optical property; 1ST-PRINCIPLES CALCULATIONS; OPTICAL-PROPERTIES; LATTICE-CONSTANT; KMF3; M; MN; CO; PREDICTION; CRYSTALS; ZN; MG;
D O I
10.1016/j.ssc.2017.07.010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Detailed ab-initio calculations are performed to investigate structural, elastic, mechanical, magneto-electronic and optical properties of the KXF3 (X = V, Fe, Co, Ni) fluoro-perovskites using Full Potential Linearized Augmented Plane Wave (FP-LAPW) method within the framework of density functional theory (DFT). The calculated structural parameters by DFT and analytical methods are found consistent with the experimental results. From the elastic and mechanical properties, it can be inferred that these compounds are elastically stable and anisotropic while KCoF3 is harder than rest of the compounds. Furthermore, thermal behavior of these compounds is analyzed by calculating Debye temperature (theta(D)). The calculated spin dependent magneto-electronic properties in these compounds reveal that exchange splitting is dominated by N-3d orbital. The stable magnetic phase optimizations verify the experimental observations at low temperature. Type of chemical bonding is analyzed with the help of variations in electron density difference distribution that is induced due to changes of the second cation. The linear optical properties are also discussed in terms of optical spectra. The present methodology represents an influential approach to calculate the whole set of mechanical and magneto-opto-electronic parameters, which would support to understand various physical phenomena and empower device engineers for implementing these materials in spintronic applications.
引用
收藏
页码:39 / 48
页数:10
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