Phonon-assisted normal incidence intersubband absorption in semiconductor quantum wells

In the presence of a normally incident mid-IR pulsed laser field, phonon-assisted photon absorption by both intrasubband and intersubband phonon scattering of conduction electrons in GaAs/AlGaAs quantum wells are predicted. The novel non-resonant and non-linear intersubband absorption is found by including the photon-induced phonon scattering process in a Boltzmann equation for phonon energies smaller than the energy separation between two electron subbands in the quantum well. The predicted phonon-assisted photon absorption by intersubband transitions of electrons from the first to the second subband is a unique feature in quantum-well systems and is expected to have a significant effect on the electron populations in both subbands. (C) 2003 Elsevier B.V. All rights reserved.