Etching of silicon oxide films in supercritical carbon dioxide

被引：10

作者：

Saga, K ^{[1
]}

Kuniyasu, H

Hattori, T

Yamada, K

Azuma, T

机构：

[1] Sony Corp, Atsugi, Kanagawa 2438585, Japan

[2] Mitsubishi Gas Chem Co, Tokyo 1250051, Japan

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES VII | 2005年 / 103-104卷

关键词：

supercritical CO2; silicon dioxide; etching; MEMS;

D O I：

10.4028/www.scientific.net/SSP.103-104.115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：115 / 118

页数：4

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