Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films:: the role of disorder

被引:56
作者
Orhan, E [1 ]
Anicete-Santos, M
Maurera, MAMA
Pontes, FM
Paiva-Santos, CO
Souza, AG
Varela, JA
Pizani, PS
Longo, E
机构
[1] Univ Estadual Paulista, Inst Quim, BR-14081907 Araraquara, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Quim, BR-13565905 Sao Carlos, SP, Brazil
[3] Univ Fed Paraiba, CCEN, Dept Quim, BR-58059900 Joao Pessoa, Paraiba, Brazil
[4] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
ab initio calculations; photoluminescence; thin films;
D O I
10.1016/j.chemphys.2004.11.013
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The nature of intense visible photoluminescence at room temperature of SrWO4 (SWO) non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The SWO thin films were synthesized by the polymeric precursors method. Their structural properties have been obtained by X-ray diffraction data and the corresponding photoluminescence (PL) spectra have been measured. The UV-vis optical spectra measurements suggest the creation of localized states in the disordered structure. The photoluminescence measurements reveal that the PL changes with the degree of disorder in the SWO thin film. To understand the origin of visible PL at room temperature in disordered SWO, we performed quantum-mechanical calculations on crystalline and disordered SWO periodic models. Their electronic structures are analyzed in terms of DOS, hand dispersion and charge densities. We used DFT method with the hybrid non-local B3LYP approximation. The polarization induced by the symmetry break and the existence of localized levels favors the creation of trapped holes and electrons, giving origin to the room temperature photoluminescence phenomenon in the SWO thin films. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 9
页数:9
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