Effects of the addition of helium on the synthesis of diamond films

被引:13
作者
Baranauskas, V [1 ]
Ceragioli, HJ [1 ]
Peterlevitz, AC [1 ]
Tosin, MC [1 ]
Durrant, SF [1 ]
机构
[1] Univ Estadual Campinas, Fac Engn Eletr & Computacao, Dept Semicond Instrumentos & Foton, BR-13083970 Campinas, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
diamond growth in helium; noble gases in diamond; diamond chemical vapor deposition;
D O I
10.1016/S0040-6090(00)01320-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present experimental results of chemical vapor deposition (CVD) diamond growth from ethanol vapor with the substitution of hydrogen by helium in concentrations varying from 0 to 95 vol.% He. Scanning electron microscopy (SEM) analysis revealed that the addition of helium to the gas phase influenced the growth rate and film structure. The deposition rate of diamond increases up to a helium concentration of 40 vol.% and then decreases. We attribute this behavior to an increase in the density of vacancies in the film or to a change in the reaction kinetics provoked by the chemical inertness of helium. Diamond films with well-defined crystalline facets and of good quality (measured by Raman spectroscopy) were obtained with the addition of up to 70 vol.% He. Use of helium also provokes an increase in film porosity, with the appearance of a strong room temperature photoluminescence with a Gaussian peak at approximately 635 nm. The intensity of the luminescence increases with the concentration of helium and is probably related to nanoporous defects introduced into the diamond structure. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:182 / 187
页数:6
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