Dielectric relaxation of Al/LU2O3/Al thin film structures from 10 μHz to 10 MHz

被引:8
作者
Wiktorczyk, Tadeusz [1 ]
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
关键词
devices; dielectric properties; relaxation; electric modulus; films and coatings; surfaces and interfaces;
D O I
10.1016/j.jnoncrysol.2007.01.096
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Results of dielectric studies of lutetium sesquioxide layers examined in Al/LU2O3/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10(-5)-10(7) Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan delta(f) and also on the complex plane as Cole-Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan delta(U) was examined. Experimental data were analyzed taking into account thin insulating LU2O3 film, near-electrode regions of Al/Lu2O3 and Lu2O3/Al interfaces and series resistance of electrodes and leads. The parameters of LU2O3 film, near-electrode regions and resistance of contacts and leads were determined. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:4400 / 4404
页数:5
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