devices;
dielectric properties;
relaxation;
electric modulus;
films and coatings;
surfaces and interfaces;
D O I:
10.1016/j.jnoncrysol.2007.01.096
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Results of dielectric studies of lutetium sesquioxide layers examined in Al/LU2O3/Al thin film sandwiches are reported. The dielectric measurements were carried out in the frequency range 10(-5)-10(7) Hz and for temperatures from 292 K to 500 K. Results are presented as plots of frequency functions: the capacitance, the dielectric loss factor, tan delta(f) and also on the complex plane as Cole-Cole plots and Nyquist plots. The influence of the external voltage on C(U) and tan delta(U) was examined. Experimental data were analyzed taking into account thin insulating LU2O3 film, near-electrode regions of Al/Lu2O3 and Lu2O3/Al interfaces and series resistance of electrodes and leads. The parameters of LU2O3 film, near-electrode regions and resistance of contacts and leads were determined. (c) 2007 Elsevier B.V. All rights reserved.