Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy -: art. no. 235334

被引:200
作者
Zakharov, DN
Liliental-Weber, Z
Wagner, B
Reitmeier, ZJ
Preble, EA
Davis, RF
机构
[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
D O I
10.1103/PhysRevB.71.235334
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conventional and high-resolution electron microscopy have been applied for studying lattice defects in nonpolar a-plane GaN grown on a 4H-SiC substrate with an AlN buffer layer. Samples in plan-view and cross-sectional configurations have been investigated. Basal and prismatic stacking faults together with Frank and Shockley partial dislocations were found to be the main defects in the GaN layers. High-resolution electron microscopy in combination with image simulation supported Drum's model for the prismatic stacking faults. The density of basal stacking faults was measured to be similar to 1.6x10(6) cm(-1). The densities of partial dislocations terminating I-1 and I-2 types of intrinsic basal stacking faults were similar to 4.0x10(10) cm(-2) and similar to 0.4x10(10) cm(-2), respectively. The energy of the I-2 stacking fault in GaN was estimated to be (40 +/- 4) erg/cm(2) based on the separation of Shockley partial dislocations.
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页数:9
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