Investigation of ramp-type Josephson junctions with surface-modified barriers

被引：35

作者：

Soutome, Y ^{[1
]}

Hanson, R ^{[1
]}

Fukazawa, T ^{[1
]}

Saitoh, K ^{[1
]}

Tsukamoto, A ^{[1
]}

Tarutani, Y ^{[1
]}

Takagi, K ^{[1
]}

机构：

[1] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2001年 / 11卷 / 01期

关键词：

barrier thickness; dielectric constant; high-temperature superconductor; interface-engineered junction; McCumber parameter; ramp-edge;

D O I：

10.1109/77.919310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the properties of YBa2Cu3O7. ramp-edge Josephson junctions with surface-modified barriers produced by Ar-ion irradiation followed by oxygen annealing, The fabricated junctions displayed RSJ-like I-V characteristics and excellent uniformity, The stray capacitance of the junctions was estimated from the ramp-edge structure, The junction capacitance was obtained by subtracting the stray capacitance from the shunting capacitance, We estimated the barrier thickness from the junction capacitance, end found that the critical current density of the junction increased exponentially with decreasing barrier thickness. The relative dielectric constant of the barriers ranged from 13 to 18.

引用

页码：163 / 166

页数：4

共 11 条

[1] Fabrication of YBa2Cu3O7 ramp-type junctions by interface treatments [J].

Dittmann, R ;

Heinsohn, JK ;

Braginski, AI ;

Jia, CL .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) :3440-3443

[2] Preparation of ramp-edge Josephson junctions with natural barriers [J].

Fujimaki, A ;

Kawai, K ;

Hayashi, N ;

Horibe, M ;

Maruyama, M ;

Hayakawa, H .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) :3436-3439

[3] Properties of interface-engineered high T-c Josephson junctions [J].

Moeckly, BH ;

Char, K .

APPLIED PHYSICS LETTERS, 1997, 71 (17) :2526-2528

[4] High-temperature superconducting edge-type Josephson junctions with modified interfaces [J].

Satoh, T ;

Hidaka, M ;

Tahara, S .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) :3141-3144

[5]

SOUTOME Y, 1999, 4 JOINT ISTEC MRS WO, P113

[6]

SOUTOME Y, 2000, ADV SUPERCONDUCTIVIT, V12, P990

[7] New substrates for HTSC microwave devices [J].

Tidrow, SC ;

Tauber, A ;

Wilber, WD ;

Lareau, RT ;

Brandle, CD ;

Berkstresser, GW ;

VenGraitis, AJ ;

Potrepka, DM ;

Budnick, JI ;

Wu, JZ .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) :1766-1768

[8]

VANDUZER T, 1981, PRINCIPLE SUPERCONDU

[9]

VARYUKHIN SV, 1993, JETP LETT+, V58, P101

[10] Ramp-type junction parameter control by Ga doping of PrBa2Cu3O7-delta barriers [J].

Verhoeven, MAJ ;

Gerritsma, GJ ;

Rogalla, H ;

Golubov, AA .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :848-850

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