Energy transfer in a type-I van der Waals heterostructure of WSe2/PtSe2

被引:11
作者
Wang, Pengzhi [1 ,2 ,3 ]
Wang, Yongsheng [2 ]
Bian, Ang [2 ]
Hao, Shengcai [4 ,5 ]
Miao, Qing [2 ]
Zhang, Xiaoxian [2 ]
He, Jiaqi [1 ]
He, Dawei [2 ]
Zhao, Hui [6 ]
机构
[1] Beijing Univ Chem Technol, Coll Math & Phys, Beijing 100029, Peoples R China
[2] Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
[3] Chinese Acad Sci, Aerosp Informat Res Inst, GBA Branch, Guangzhou 510700, Peoples R China
[4] Beijing Inst Electromachining Co Ltd, Beijing Key Lab Electro Discharge Machining Techn, Beijing 100191, Peoples R China
[5] Beijing Acad Sci & Technol, Beijing 100089, Peoples R China
[6] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
PtSe2; van der Waals heterostructure; energy transfer; transient absorption spectroscopy; TRANSITION-METAL-DICHALCOGENIDE; ULTRAFAST CHARGE-TRANSFER; EXCITON FORMATION; PHOTOCURRENT GENERATION; ELECTRONIC-PROPERTIES; MONOLAYER; LAYER; PTSE2; DYNAMICS; BILAYER;
D O I
10.1088/2053-1583/ac75f2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Energy transfer of a van der Waals heterostructure formed by monolayers of WSe2 and PtSe2 is studied by steady-state photoluminescence (PL) and time-resolved transient absorption spectroscopy. The heterostructure sample is fabricated by transferring a mechanically exfoliated WSe2 monolayer onto a PtSe2 monolayer film obtained by chemical vapor deposition. The sample is thermally annealed to improve the interface quality. PL of the heterostructure is quenched by four times compared to the individual WSe2 monolayer, indicating excitation transfer from WSe2 to PtSe2. Femtosecond transient absorption measurements with two configurations show that both the electrons and the holes can transfer from WSe2 to PtSe2 on a sub-picosecond time scale, while neither can transfer from PtSe2 to WSe2. These results indicate that WSe2 and PtSe2 monolayers form a type-I band alignment with both the conduction band minimum and the valence band maximum in the PtSe2 layer.
引用
收藏
页数:7
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