Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix

被引：9

作者：

Camassel, J ^{[1
]}

Juillaguet, S

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

[2] CNRS, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

4H-SiC; 3C stacking faults; quantum wells thickness;

D O I：

10.4028/www.scientific.net/MSF.483-485.331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type U quantum well. As a consequence, it can bind two excitons per well. We show in this work that, as the SF thickness increases, the relative intensity of the two transitions changes. This comes from a change in the wave functions overlap between the electron trapped in the well and the holes trapped neighbouring parts of the 4H-SiC matrix.

引用

页码：331 / 334

页数：4

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