Modes of rf capacitive discharge in low-pressure sulfur hexafluoride

被引:23
作者
Lisovskiy, V. [1 ]
Booth, J-P
Jolly, J.
Martins, S.
Landry, K.
Douai, D.
Cassagne, V.
Yegorenkov, V.
机构
[1] Kharkov Natl Univ, UA-61077 Kharkov, Ukraine
[2] Ecole Polytech, Lab Phys & Technol Plasmas, F-91128 Palaiseau, France
[3] Unaxis Displays Div France SAS, F-91120 Palaiseau, France
[4] Assoc Euratom CEA, Dept Rech Fus Controlee, CEA Cadarache, F-13108 St Paul Les Durance, France
[5] Riber, F-95873 Bezons, France
关键词
D O I
10.1088/0022-3727/40/22/020
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents the results of an experimental study of rf capacitive discharge in low-pressure SF(6). The rf discharge in SF(6) is shown to exist not only in weak-current (alpha-) and strong-current (gamma-) modes but also in a dissociative delta- mode. This delta-mode is characterized by a high degree of SF(6) dissociation, high plasma density, electron temperature and active discharge current, and it is intermediate between alpha- and. gamma-modes. The delta-mode appears due to a sharp increase in the dissociation rate of SF(6) molecules via electron impact starting after a certain threshold value of rf voltage. At the same time the threshold ionization energy of SF(x) (x = 1-5) radicals formed is below the ionization potential of SF(6) molecules. The double layer existing in the anode phase of the near-electrode sheath is shown to play an important role in sustaining the alpha-mode as well as the delta-mode but it is not a cause of the rf discharge transition from alpha- to delta-mode.
引用
收藏
页码:6989 / 6999
页数:11
相关论文
共 41 条
[1]   Absolute total and partial cross sections for the electron impact ionization of tetrafluorosilane (SiF4) [J].
Basner, R ;
Schmidt, M ;
Denisov, E ;
Becker, K ;
Deutsch, H .
JOURNAL OF CHEMICAL PHYSICS, 2001, 114 (03) :1170-1177
[2]   TRANSITION BETWEEN DIFFERENT REGIMES OF RF GLOW-DISCHARGES [J].
BELENGUER, P ;
BOEUF, JP .
PHYSICAL REVIEW A, 1990, 41 (08) :4447-4459
[3]  
BOEUF JP, 1990, NATO ADV SCI I B-PHY, V220, P155
[4]   Sulfur hexafluoride and the electric power industry [J].
Christophorou, LG ;
Olthoff, JK ;
VanBrunt, RJ .
IEEE ELECTRICAL INSULATION MAGAZINE, 1997, 13 (05) :20-24
[5]   Optical and mass spectrometric investigations of ions and neutral species in SF6 radio-frequency discharges [J].
Foest, R ;
Olthoff, JK ;
VanBrunt, RJ ;
Benck, EC ;
Roberts, JR .
PHYSICAL REVIEW E, 1996, 54 (02) :1876-1887
[6]   ION-BOMBARDMENT SECONDARY-ELECTRON MAINTENANCE OF STEADY RF DISCHARGE [J].
GODYAK, VA ;
KHANNEH, AS .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) :112-123
[7]   GLOW-DISCHARGE SHEATH ELECTRIC-FIELDS - NEGATIVE-ION, POWER, AND FREQUENCY-EFFECTS [J].
GOTTSCHO, RA .
PHYSICAL REVIEW A, 1987, 36 (05) :2233-2242
[8]   INFLUENCE OF FREQUENCY, PRESSURE, AND MIXTURE RATIO OF ELECTRONEGATIVE GAS ON ELECTRICAL CHARACTERISTICS OF RF DISCHARGES IN N-2-SF-6 MIXTURES [J].
KAKUTA, S ;
PETROVIC, ZL ;
TOCHIKUBO, F ;
MAKABE, T .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :4923-4931
[9]   Study of CF4, C2F6, SF6 and NF3 decomposition characteristics and etching performance in plasma state [J].
Koike, K ;
Fukuda, T ;
Fujikawa, S ;
Saeda, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A) :5724-5728
[10]   TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY (TOF-SIMS) STUDY OF SF6 AND SF6-CF4 PLASMA-TREATED LOW-DENSITY POLYETHYLENE FILMS [J].
LEONARD, D ;
BERTRAND, P ;
KHAIRALLAHABDELNOUR, Y ;
AREFIKHONSARI, F ;
AMOUROUX, J .
SURFACE AND INTERFACE ANALYSIS, 1995, 23 (7-8) :467-476