Effect of on band alignment of compressively strained Ga1-xInxNy As1-y-zSbz/GaAs quantum well structures

被引：12
作者：
Aissat, A. [1 ]
Nacer, S. [1 ]
Seghilani, M. [1 ]
Vilcot, J. P. [2 ]
机构：
[1] Univ Saad Dahlab Blida, Fac Engn Sci, LASICOM Lab, Blida, Algeria
[2] Univ Sci & Technol Lille 1, UMR CNRS 8520, IEMN, F-59652 Villeneuve Dascq, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 43卷 / 01期
关键词：
CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; LASERS; WAVELENGTH; GAINNAS; LAYERS; GAAS; SURFACTANT; ALLOYS; GROWTH;
D O I：
10.1016/j.physe.2010.06.016
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we provide a systematic investigation of the band alignment of quinary GaInNAsSb alloy based quantum wells, starting from the simplest ternary GaInAs compound to the new quinary GaInNAsSb one. We calculate the band gap and the band discontinuities of Ga1-xInxNy As1-y-zSbz structures, using band anticrossing (BAC) models applied simultaneously to conduction and valence band. Nitrogen and antimony concentrations leading to an emission wavelength of 1.6 mu m have been determined (x=38%, y=2%, z=4%). This structure shows a good electron confinement resulting in a high characteristic temperature. GaInNAsSb has been found to be a potentially superior material to both InGaAsP and GaInNAs for communication wavelength laser applications. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：40 / 44
页数：5
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