Giant Positive Magnetoresistance in Ferromagnetic Manganites/Silicon Nanotips Diode

被引：9
作者：
Chong, Cheong-Wei [1 ]
Hsu, Daniel [1 ]
Chen, Wei-Chao [3 ]
Li, Chien-Cheng [4 ]
Lin, Jauyn Grace [1 ]
Chen, Li-Chyong [1 ]
Chen, Kuei-Hsien [1 ,3 ]
Chen, Yang-Fang [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[4] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 310, Taiwan
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 39期
关键词：
Lanthanum compounds - Temperature distribution - Strontium compounds - Electron-electron interactions - Interfaces (materials);
D O I：
10.1021/jp308823r
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The current voltage relations and magnetotransport properties of La0.7Sr0.3MnO3/Si-nanotips and La0.7Sr0.3MnO3/Si-film junctions are studied, revealing that their transport properties are dominated by various mechanisms depending on temperature and bias voltage. A giant positive magnetoresistance (PMR) of similar to 200% is observed at 40 K in La0.7Sr0.3MnO3/Si-nanotips junction. The temperature dependence of resistance in the presence of magnetic field suggests the origin of giant PMR to be the strong electron-electron interaction and electron-magnon scattering. Interestingly, such behavior is not observed in regular La0.7Sr0.3MnO3/Si-film junction, implying that the coupling between spin and charge could be greatly enhanced at the interface of La0.7Sr0.3MnO3 and Si nanotips.
引用
收藏
页码：21132 / 21137
页数：6
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