Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE

The enhancement of the production rate of nitrogen radical from a radio frequency (RF) discharge plasma is reported through the application of a DC magnetic field under RF-ECR (electron cyclotron resonance of RF) condition. High efficiency of the nitrogen radical production was realized by an optimum magnetic field for the resonance of about 0.5mT for the electron energy of 2 eV for the 13.56-MHz discharge. The effect of controlling the divergence of the nitrogen radical flux by changing the orifice dimension was studied by measuring the color change of interference due to the film thickness. The aspect ratio of the orifice hole and the distribution of hole position determined the flux diversity. Combinatorial methodology, which realizes various III/V flux ratio without substrate rotation due to non-uniform flux, was used to study the effect of the III/V flux ratio to poly-type formation by photoluminescence. The cubic phase was grown under a stoichiometric condition of slightly Ga-rich side, with an III/V ratio of about one. (C) 2004 Elsevier B. V. All rights reserved.