The resistivity-temperature behavior of AlxCoCrFeNi high-entropy alloy films

被引：31

作者：

Wang, Chenyu ^{[1
]}

Li, Xiaona ^{[1
]}

Li, Zhumin ^{[1
]}

Wang, Qing ^{[2
]}

Zheng, Yuehong ^{[3
]}

Ma, Yue ^{[2
]}

Bi, Linxia ^{[1
]}

Zhang, Yuanyuan ^{[2
]}

Yuan, Xihui ^{[2
]}

Zhang, Xin ^{[2
]}

Dong, Chuang ^{[1
]}

Liaw, Peter K. ^{[4
]}

机构：

[1] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

[3] Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China

[4] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

THIN SOLID FILMS | 2020年 / 700卷

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

High-entropy alloy; Thin-film resistors; Resistivity-temperature behavior; Disordered solid-solutions; THIN-FILM; MECHANICAL-PROPERTIES; ELECTRICAL CHARACTERISTICS; MICROSTRUCTURE; TRANSITION; COATINGS; NITRIDE;

D O I：

10.1016/j.tsf.2020.137895

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Comprehensive understandings for the resistivity-temperature behavior of high-entropy alloy (HEA) films is crucial for assessing their potential as thin-film resistive materials. But due to the great difference between the structure of bulk and film materials, the resistivity-temperature behavior of the bulk HEAs cannot be directly introduced to understand the evolution law of the resistivity of HEA films with temperature. The present work investigated the resistivity change with temperature from room temperature to 1078 K of AlxCoCrFeNi (x = 0.7, 1.0) HEA films composed of face- and body-centered-cubic phases, and compared it with that of bulk HEAs with similar compositions. It was found that the AlxCoCrFeNi HEA films exhibit the ultralow temperature coefficient of resistance (TCR) within a range of +/- 10 ppm/K, and their resistivity is tunable over a wide range from 191.8 mu Omega.cm (x = 1.0) to 535.9 mu Omega.cm (x = 0.7), which is beyond the reach of conventional alloy films. For both the film and bulk AlxCoCrFeNi HEAs, the resistivity-temperature behaviors exhibit similar characteristics of high resistivity and low TCRs before phase transitions, and can be described by the equation, rho = b(0) + b(1)T(1 - b(2)T(2)), with the consideration of the phonon scattering and the s-d scattering effect in transition metals. The multi-principal element mixing feature of HEAs will open up more approaches to optimize the properties of thin-film resistive materials.

引用

页数：10

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