Spin Seebeck effect in thin films of the Heusler compound Co2MnSi

被引:145
作者
Bosu, S. [1 ]
Sakuraba, Y. [1 ]
Uchida, K. [1 ]
Saito, K. [1 ]
Ota, T. [1 ]
Saitoh, E. [1 ,2 ,3 ,4 ]
Takanashi, K. [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan
关键词
MAGNETORESISTANCE; ELECTRONICS;
D O I
10.1103/PhysRevB.83.224401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The recently discovered spin Seebeck effect (SSE) which generates spin voltage due to a temperature gradient in ferromagnets, was systematically studied in half-metallic Heusler compound Co2MnSi (CMS)/Pt thin films to investigate the effect of spin polarization of ferromagnetic layer on SSE. An epitaxial thin film of CMS with an almost perfect B2-ordered structure was prepared directly on a MgO(001) substrate. The measurement was performed at room temperature for various temperature differences, Delta T = 0-20 K between higher (300 K+Delta T) and lower (300 K) temperature ends along the film. The clear sign reversal of the thermally induced spin voltage due to SSE at the higher and lower temperature ends of the CMS film was detected by means of inverse spin-Hall effect in a Pt wire. The SSE was also investigated in a Py thin film deposited on a MgO(001) substrate and compared to that with CMS to verify the effect of spin polarization on SSE. Comparable signals of SSE in CMS and Py thin films suggested that thermal excitation of magnons might have more vital effects in SSE than the degree of spin polarization in ferromagnetic metals.
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页数:6
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