CO+NH3 plasma etching for magnetic thin films

被引：22

作者：

Kubota, Hitoshi ^{[1
]}

Ueda, Kousei ^{[1
]}

Ando, Yasuo ^{[1
]}

Miyazaki, Terunobu ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

CO; NH3; reactive ion etching; magnetic thin film; etching rate; appearance mass spectroscopy;

D O I：

10.1016/j.jmmm.2003.12.724

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Etching of magnetic thin films has been studied using CO/NH3 plasma with an electron cyclotron resonance plasma source and DC sample bias. Etch rates were proportional to bias power density. The maximum etch rate was 127 nm/ min. Both the pressure dependence of Ni - Fe etch rate and the results of appearance mass spectroscopy suggested that the chemical reaction induced by energetic CO molecules enhanced the etch rate. (C) 2003 Elsevier B. V. All rights reserved.

引用

页码：E1421 / E1422

页数：2

共 5 条

[1] Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements [J].