High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1nm) spacer layer

被引：82

作者：

Kalarickal, Nidhin Kurian ^{[1
]}

Xia, Zhanbo ^{[1
]}

McGlone, Joe F. ^{[1
]}

Liu, Yumo ^{[2
]}

Moore, Wyatt ^{[1
]}

Arehart, Aaron R. ^{[1
]}

Ringel, Steven A. ^{[1
,2
]}

Rajan, Siddharth ^{[1
,2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 21期

关键词：

GROWTH;

D O I：

10.1063/5.0005531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This report discusses the design and demonstration of beta-(Al0.17Ga0.83)(2)O-3/Ga2O3 modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and the heterojunction interface was investigated in a beta-(AlGa)(2)O-3/Ga2O3 modulation doped structure. It is shown that this strategy enables a higher two-dimensional electron gas (2DEG) sheet charge density up to 4.7x10(12)cm(-2) with an effective mobility of 150cm(2)/Vs. The presence of a degenerate 2DEG channel was confirmed by the measurement of a low temperature effective mobility of 375cm(2)/Vs and the lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 4.7x10(12)cm(-2) is the highest reported 2DEG density obtained without parallel conducting channels in a beta-(AlxGa(1-x))(2)O-3/Ga2O3 heterostructure system.

引用

页数：7

共 32 条

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Zhang, Yuewei ;

Neal, Adam ;

Xia, Zhanbo ;

Joishi, Chandan ;

Johnson, Jared M. ;

Zheng, Yuanhua ;

Bajaj, Sanyam ;

Brenner, Mark ;

Dorsey, Donald ;

Chabak, Kelson ;

Jessen, Gregg ;

Hwang, Jinwoo ;

Mou, Shin ;

Heremans, Joseph P. ;

Rajan, Siddharth .

APPLIED PHYSICS LETTERS, 2018, 112 (17)

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