High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1nm) spacer layer

被引：81

作者：

Kalarickal, Nidhin Kurian ^{[1
]}

Xia, Zhanbo ^{[1
]}

McGlone, Joe F. ^{[1
]}

Liu, Yumo ^{[2
]}

Moore, Wyatt ^{[1
]}

Arehart, Aaron R. ^{[1
]}

Ringel, Steven A. ^{[1
,2
]}

Rajan, Siddharth ^{[1
,2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 21期

关键词：

GROWTH;

D O I：

10.1063/5.0005531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This report discusses the design and demonstration of beta-(Al0.17Ga0.83)(2)O-3/Ga2O3 modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and the heterojunction interface was investigated in a beta-(AlGa)(2)O-3/Ga2O3 modulation doped structure. It is shown that this strategy enables a higher two-dimensional electron gas (2DEG) sheet charge density up to 4.7x10(12)cm(-2) with an effective mobility of 150cm(2)/Vs. The presence of a degenerate 2DEG channel was confirmed by the measurement of a low temperature effective mobility of 375cm(2)/Vs and the lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 4.7x10(12)cm(-2) is the highest reported 2DEG density obtained without parallel conducting channels in a beta-(AlxGa(1-x))(2)O-3/Ga2O3 heterostructure system.

引用

页数：7

共 32 条

[1]

[Anonymous], 2018, AJIL, V112, pF1, DOI [10.1017/ajil.2018.46, DOI 10.1063/1.5002138]

[2]

Davies J.H., 1998, The Physics of Low-Dimensional Semiconductors

[3]

Ferry D., 2009, TRANSPORT NANOSTRUCT

[4]

Fornari R, 2019, METAL OXIDES, P3, DOI 10.1016/B978-0-12-814521-0.00001-4

[5] Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method [J].

Galazka, Zbigniew ;

Uecker, Reinhard ;

Klimm, Detlef ;

Irmscher, Klaus ;

Naumann, Martin ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Bertram, Rainer ;

Ganschow, Steffen ;

Bickermann, Matthias .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3007-Q3011

[6] High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination [J].

Gao, Yangyang ;

Li, Ang ;

Feng, Qian ;

Hu, Zhuangzhuang ;

Feng, Zhaoqing ;

Zhang, Ke ;

Lu, Xiaoli ;

Zhang, Chunfu ;

Zhou, Hong ;

Mu, Wenxiang ;

Jia, Zhitai ;

Zhang, Jincheng ;

Hao, Yue .

NANOSCALE RESEARCH LETTERS, 2019, 14 (1)

[7] POLAR OPTICAL-PHONON SCATTERING IN 3-DIMESIONAL AND 2-DIMENSIONAL ELECTRON GASES [J].

GELMONT, BL ;

SHUR, M ;

STROSCIO, M .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :657-660

[8] Electron mobility in monoclinic -Ga2O3Effect of plasmon-phonon coupling, anisotropy, and confinement [J].

Ghosh, Krishnendu ;

Singisetti, Uttam .

JOURNAL OF MATERIALS RESEARCH, 2017, 32 (22) :4142-4152

[9] β-Ga2O3 MOSFETs for Radio Frequency Operation [J].

Green, Andrew Joseph ;

Chabak, Kelson D. ;

Baldini, Michele ;

Moser, Neil ;

Gilbert, Ryan ;

Fitch, Robert C., Jr. ;

Wagner, Guenter ;

Galazka, Zbigniew ;

McCandless, Jonathan ;

Crespo, Antonio ;

Leedy, Kevin ;

Jessen, Gregg H., Sr. .

IEEE ELECTRON DEVICE LETTERS, 2017, 38 (06) :790-793

[10] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

← 1 2 3 4 →