Atmospheric-pressure MOVPE growth of In-rich InAIN

被引：18

作者：

Houchin, Y. ^{[1
]}

Hashimoto, A. ^{[1
]}

Yamamoto, A. ^{[1
]}

机构：

[1] Univ Fukui, Dept Elect & Elect Engn, Grad Sch Engn, Fukui 9108507, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778499

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports the atmospheric-pressure MOVPE growth of In-rich InAIN. All InAIN films prepared here (At content:0 similar to 0.43) do not show phase separation. The incorporation of Al in InAIN is decreased with increasing growth temperature. A decrease in Al content is also observed for films grown at a position farther from the up-stream end of the susceptor. The marked decrease in the At content along the gas flow direction seems to be caused by the shortage of TMA supply at the downstream by the parasitic reaction of TMA. A single-crystalline MAN film with an At content of 0-0.43 is successfully grown by adjusting growth temperature and TMA/(TMI+TMA) molar ratio. FWHM of X-ray rocking curve for InAIN is increased with increasing At content. The carrier concentrations in InAIN films are comparable to that in InN (1-5 x 10(19) cm(-3)). All the single-crystalline InAIN films with an At content of 0-0.3 show a photoluminescence at room temperature.

引用

页码：1571 / 1574

页数：4

共 8 条

[1]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO

[2]

2-Z

[3] Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range [J].

Hums, C. ;

Blaesing, J. ;

Dadgar, A. ;

Diez, A. ;

Hempel, T. ;

Christen, J. ;

Krost, A. ;

Lorenz, K. ;

Alves, E. .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[4] Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy [J].

Terashima, Wataru ;

Che, Song-Bek ;

Ishitani, Yoshihiro ;

Yoshikawa, Akihiko .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (20-23) :L539-L542

[5] NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN [J].

Yamamoto, A. ;

Miwa, H. ;

Shibata, Y. ;

Hashimoto, A. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1527-1530

[6]

Yamamoto A, 2002, PHYS STATUS SOLIDI A, V194, P510, DOI 10.1002/1521-396X(200212)194:2<510::AID-PSSA510>3.0.CO

[7]

2-6

[8] Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition [J].

Zhao, DG ;

Zhu, JJ ;

Jiang, DS ;

Yang, H ;

Liang, JW ;

Li, XY ;

Gong, HM .

JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :72-75

← 1 →