Atmospheric-pressure MOVPE growth of In-rich InAIN

被引:18
作者
Houchin, Y. [1 ]
Hashimoto, A. [1 ]
Yamamoto, A. [1 ]
机构
[1] Univ Fukui, Dept Elect & Elect Engn, Grad Sch Engn, Fukui 9108507, Japan
来源
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期
关键词
D O I
10.1002/pssc.200778499
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper reports the atmospheric-pressure MOVPE growth of In-rich InAIN. All InAIN films prepared here (At content:0 similar to 0.43) do not show phase separation. The incorporation of Al in InAIN is decreased with increasing growth temperature. A decrease in Al content is also observed for films grown at a position farther from the up-stream end of the susceptor. The marked decrease in the At content along the gas flow direction seems to be caused by the shortage of TMA supply at the downstream by the parasitic reaction of TMA. A single-crystalline MAN film with an At content of 0-0.43 is successfully grown by adjusting growth temperature and TMA/(TMI+TMA) molar ratio. FWHM of X-ray rocking curve for InAIN is increased with increasing At content. The carrier concentrations in InAIN films are comparable to that in InN (1-5 x 10(19) cm(-3)). All the single-crystalline InAIN films with an At content of 0-0.3 show a photoluminescence at room temperature.
引用
收藏
页码:1571 / 1574
页数:4
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