Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films

被引：156
作者：
Yoshimi, R. [1 ,2 ]
Tsukazaki, A. [3 ,4 ]
Kozuka, Y. [1 ,2 ]
Falson, J. [1 ,2 ]
Takahashi, K. S. [5 ]
Checkelsky, J. G. [1 ,2 ]
Nagaosa, N. [1 ,2 ,5 ]
Kawasaki, M. [1 ,2 ,5 ]
Tokura, Y. [1 ,2 ,5 ]
机构：
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Univ Tokyo, QPEC, Tokyo 1138656, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] Japan Sci & Technol Agcy JST, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan
[5] RIKEN, CEMS, Wako, Saitama 3510198, Japan
来源：
NATURE COMMUNICATIONS | 2015年 / 6卷
基金：
日本学术振兴会;
关键词：
D O I：
10.1038/ncomms7627
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)(2)Te-3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor +/- 1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.
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页数：6
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