Simulation of MoS2 stacked nanosheet field effect transistor

被引：7
|
作者：
Shen, Yang [1 ,2 ]
Tian, He [1 ,2 ]
Ren, Tianling [1 ,2 ]
机构：
[1] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 08期
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
MoS2; stacked nanosheet GAA; TCAD simulation; RESISTANCE;
D O I：
10.1088/1674-4926/43/8/082002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS2. In addition, small-signal capacitance is extracted and analyzed. The MoS2 based NSFET shows great potential to enable next generation electronics.
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页数：5
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