Simulation of MoS2 stacked nanosheet field effect transistor

被引：7
|
作者：
Shen, Yang [1 ,2 ]
Tian, He [1 ,2 ]
Ren, Tianling [1 ,2 ]
机构：
[1] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing 100084, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 08期
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
MoS2; stacked nanosheet GAA; TCAD simulation; RESISTANCE;
D O I：
10.1088/1674-4926/43/8/082002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS2. In addition, small-signal capacitance is extracted and analyzed. The MoS2 based NSFET shows great potential to enable next generation electronics.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Design and performance analysis of double gate vertically stacked MoS2 nanosheet field effect transistor
    Rudravaram, Srikanth
    Shukla, Rajendra P.
    Satish, Maheshwaram
    PHYSICA SCRIPTA, 2024, 99 (08)
  • [2] Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor
    Srivastava, Ashok
    Fahad, Md S.
    SOLID-STATE ELECTRONICS, 2016, 126 : 96 - 103
  • [3] One step sputtered MoS2 field-effect transistor
    Acar, Merve
    MICRO AND NANOSTRUCTURES, 2022, 165
  • [4] Impact of Quantum Capacitance on the Characteristics of MoS2 Field Effect Transistor
    Tan, Q. H.
    Ren, W. P.
    Wang, Q. J.
    Liu, Y. K.
    14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019), 2019, 11170
  • [5] Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics
    Wang, Xiaozhou
    Yang, Shengxue
    Yue, Qu
    Wu, Fengmin
    Li, Jingbo
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 615 : 989 - 993
  • [6] A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures
    Jiang, Xixi
    Shi, Xinyao
    Zhang, Min
    Wang, Yarong
    Gu, Zhenghao
    Chen, Lin
    Zhu, Hao
    Zhang, Kai
    Sun, Qingqing
    Zhang, David Wei
    ACS APPLIED NANO MATERIALS, 2019, 2 (09) : 5674 - 5680
  • [7] Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor
    Radhakrishnan, Sreevatsan
    Vishnu, Suggula Naga Sai
    Ahmed, Syed Ishtiyaq
    Thiruvengadathan, Rajagopalan
    MICROMACHINES, 2023, 14 (02)
  • [8] MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
    Nourbakhsh, Amirhasan
    Zubair, Ahmad
    Sajjad, Redwan N.
    Tavakkoli, Amir K. G.
    Chen, Wei
    Fang, Shiang
    Ling, Xi
    Kong, Jing
    Dresselhaus, Mildred S.
    Kaxiras, Efthimios
    Berggren, Karl K.
    Antoniadis, Dimitri
    Palacios, Tomas
    NANO LETTERS, 2016, 16 (12) : 7798 - 7806
  • [9] Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor
    Jegadheesan, V.
    Sivasankaran, K., Sr.
    Konar, Aniruddha
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4079 - 4084
  • [10] Caffeine-driven n-type doping in multilayer MoS2 field effect transistor
    Al Mamun, Muhammad Shamim
    Takaoka, Tsuyoshi
    Komeda, Tadahiro
    THIN SOLID FILMS, 2025, 809
12345