Temperature-dependent valence-band photoemission study of UNiSn

被引:11
作者
Kang, JS [1 ]
Park, JG
McEwen, KA
Olson, CG
Kwon, SK
Min, BI
机构
[1] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea
[2] Inha Univ, Dept Phys, Inchon, South Korea
[3] UCL, Dept Phys & Astron, London WC1E 6BT, England
[4] Iowa State Univ Sci & Technol, Ames Lab, Ames, IA 50011 USA
[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 780784, South Korea
关键词
D O I
10.1103/PhysRevB.64.085101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of UNiSn has been investigated using photoemission spectroscopy (PES). The U 5f partial spectral weight (PSW) exhibits a broad peak centered at approximate to0.3 eV below E-F. The Ni 3d PSW shows the main peak well below E-F and a very low density of states (DOS) at E-F. The h nu dependence of the valence-band spectrum reveals a dominant U 5f electron character for the states near the Fermi level E-F, with a small contribution from the U 6d, Ni 3d, and Sn sp states. Comparison of the measured PES spectra to the LSDA+ U band structure calculation indicates the importance of the on-site Coulomb interaction between U 5f electrons in UNiSn. The high-resolution photoemission spectrum of UNiSn is described well by a V-shaped metallic DOS near E-F, suggesting a finite but reduced DOS at E-F. A possible origin for the reduced DOS at E-F might be the hybridization of the U 5f states to the Ni 3d states that have a very low DOS at E-F. T-dependent high-resolution PES for UNiSn reveals a finite DOS at E-F even above T-N.
引用
收藏
页码:851011 / 851018
页数:8
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