Can Commonly Used Hydrazine Produce n-Type Graphene?

被引：41

作者：

Some, Surajit ^{[1
]}

Bhunia, Prasenjit ^{[1
]}

Hwang, EunHee ^{[1
]}

Lee, Keunsik ^{[1
]}

Yoon, Yeoheung ^{[1
]}

Seo, Sohyeon ^{[1
]}

Lee, Hyoyoung ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Ctr Smart Mol Memory, NCRI, Suwon 440746, South Korea

来源：

CHEMISTRY-A EUROPEAN JOURNAL | 2012年 / 18卷 / 25期

关键词：

doping; graphenes; hydrazine; nanostructures; semiconductors; NITROGEN-DOPED GRAPHENE; GRAPHITE OXIDE; REDUCTION; FILMS; TRANSPARENT; SHEETS; GROWTH; ELECTRODES; DEPOSITION; DEVICES;

D O I：

10.1002/chem.201200104

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (rGO) sheets (see figure) as an n-type semiconductor through the treatment of as-prepared GO sheets with the commonly used reducing reagent hydrazine, followed by rapid thermal annealing (RTA) is described. © 2012 Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim.

引用

页码：7665 / 7670

页数：6

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