Can Commonly Used Hydrazine Produce n-Type Graphene?

被引:40
作者
Some, Surajit [1 ]
Bhunia, Prasenjit [1 ]
Hwang, EunHee [1 ]
Lee, Keunsik [1 ]
Yoon, Yeoheung [1 ]
Seo, Sohyeon [1 ]
Lee, Hyoyoung [1 ]
机构
[1] Sungkyunkwan Univ, Dept Chem, Ctr Smart Mol Memory, NCRI, Suwon 440746, South Korea
关键词
doping; graphenes; hydrazine; nanostructures; semiconductors; NITROGEN-DOPED GRAPHENE; GRAPHITE OXIDE; REDUCTION; FILMS; TRANSPARENT; SHEETS; GROWTH; ELECTRODES; DEPOSITION; DEVICES;
D O I
10.1002/chem.201200104
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (rGO) sheets (see figure) as an n-type semiconductor through the treatment of as-prepared GO sheets with the commonly used reducing reagent hydrazine, followed by rapid thermal annealing (RTA) is described. © 2012 Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim.
引用
收藏
页码:7665 / 7670
页数:6
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