Work function changes and surface chemistry of oxygen, hydrogen, and carbon on indium tin oxide

被引:48
作者
Chaney, JA [1 ]
Pehrsson, PE [1 ]
机构
[1] Naval Res Lab, Gas Surface Dynam Sect, Washington, DC 20375 USA
关键词
auger electron spectroscopy (AES); high resolution electron energy loss spectroscopy (HREELS); indium tin oxide (ITO); kelvin probe; surface chemistry; work function measurements;
D O I
10.1016/S0169-4332(01)00347-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface chemistry of indium. tin oxide (ITO) has been investigated with Auger electron spectroscopy (AES) and high resolution electron energy loss spectroscopy (HREELS). A vibrating Kelvin probe (KP) with a graphite reference was used to monitor the absolute work function (fl of ITO as a function of chemical modification. The ITO was exposed in situ to molecular hydrogen (H-2), hot-filament-activated oxygen (O-2(*)), and hot-filament-activated deuterium (D-2(*)). The initial Phi of ITO was determined to be 5.2 eV, and surface chemical changes had strong effects on this value, as seen by KR Exposure of clean ITO to O-2(*) increased Phi to similar to5.6 eV, but the increase was short-lived. The changes in Phi over time were correlated with the uptake of carbon impurities in ultra high vacuum (UHV), as monitored by AES. The HREELS of ITO revealed significant hydrocarbon impurities. Chemical reduction of ITO produced a metallic surface and dehydrogenated the adsorbed hydrocarbons. Both re-oxidation of metallic ITO and oxidation of clean ITO temporarily removed adventitious carbon from the surface, but oxidized ITO adsorbed an even larger quantity of carbon over time. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:214 / 226
页数:13
相关论文
共 74 条
  • [41] EFFECT OF POST-DEPOSITION VACUUM ANNEALING ON PROPERTIES OF ITO LAYERS
    LIBRA, M
    BARDOS, L
    [J]. VACUUM, 1988, 38 (06) : 455 - 457
  • [42] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices
    Mason, MG
    Hung, LS
    Tang, CW
    Lee, ST
    Wong, KW
    Wang, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1688 - 1692
  • [43] WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY
    MICHAELSON, HB
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4729 - 4733
  • [44] Surface oxidation activates indium tin oxide for hole injection
    Milliron, DJ
    Hill, IG
    Shen, C
    Kahn, A
    Schwartz, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 572 - 576
  • [45] Reductive ion insertion into thin-film indium tin oxide (ITO) in aqueous acidic solutions: the effect of leaching of indium from the ITO
    Monk, PMS
    Man, CM
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (02) : 101 - 107
  • [46] Surface photovoltage of porphyrin layers using the Kelvin probe technique
    Moons, E
    Goossens, A
    Savenije, T
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (42): : 8492 - 8498
  • [47] Importance of indium tin oxide surface acido basicity for charge injection into organic materials based light emitting diodes
    Nüesch, F
    Forsythe, EW
    Le, QT
    Gao, Y
    Rothberg, LJ
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7973 - 7980
  • [48] Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
  • [49] Chemical potential shifts at organic device electrodes induced by grafted monolayers
    Nuesch, F
    Rotzinger, F
    Si-Ahmed, L
    Zuppiroli, L
    [J]. CHEMICAL PHYSICS LETTERS, 1998, 288 (5-6) : 861 - 867
  • [50] O' Hanlon J.F., 1989, A User's Guide to Vacuum Technology, V2nd