Work function changes and surface chemistry of oxygen, hydrogen, and carbon on indium tin oxide

被引:48
作者
Chaney, JA [1 ]
Pehrsson, PE [1 ]
机构
[1] Naval Res Lab, Gas Surface Dynam Sect, Washington, DC 20375 USA
关键词
auger electron spectroscopy (AES); high resolution electron energy loss spectroscopy (HREELS); indium tin oxide (ITO); kelvin probe; surface chemistry; work function measurements;
D O I
10.1016/S0169-4332(01)00347-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The surface chemistry of indium. tin oxide (ITO) has been investigated with Auger electron spectroscopy (AES) and high resolution electron energy loss spectroscopy (HREELS). A vibrating Kelvin probe (KP) with a graphite reference was used to monitor the absolute work function (fl of ITO as a function of chemical modification. The ITO was exposed in situ to molecular hydrogen (H-2), hot-filament-activated oxygen (O-2(*)), and hot-filament-activated deuterium (D-2(*)). The initial Phi of ITO was determined to be 5.2 eV, and surface chemical changes had strong effects on this value, as seen by KR Exposure of clean ITO to O-2(*) increased Phi to similar to5.6 eV, but the increase was short-lived. The changes in Phi over time were correlated with the uptake of carbon impurities in ultra high vacuum (UHV), as monitored by AES. The HREELS of ITO revealed significant hydrocarbon impurities. Chemical reduction of ITO produced a metallic surface and dehydrogenated the adsorbed hydrocarbons. Both re-oxidation of metallic ITO and oxidation of clean ITO temporarily removed adventitious carbon from the surface, but oxidized ITO adsorbed an even larger quantity of carbon over time. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:214 / 226
页数:13
相关论文
共 74 条
  • [11] Work function of ITO substrates and band-offsets at the TPD/ITO interface determined by photoelectron spectroscopy
    Chkoda, L
    Heske, C
    Sokolowski, M
    Umbach, E
    Steuber, F
    Staudigel, J
    Stössel, M
    Simmerer, J
    [J]. SYNTHETIC METALS, 2000, 111 : 315 - 319
  • [12] High resolution x-ray photoemission study of plasma oxidation of indium-tin-oxide thin film surfaces
    Christou, V
    Etchells, M
    Renault, O
    Dobson, PJ
    Salata, OV
    Beamson, G
    Egdell, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5180 - 5187
  • [13] SOLID-STATE AND SURFACE-CHEMISTRY OF SN-DOPED IN2O3 CERAMICS
    COX, PA
    FLAVELL, WR
    EGDELL, RG
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1987, 68 (02) : 340 - 350
  • [14] THE OXYGEN-ADSORPTION AND THE INITIAL OXIDATION OF INDIUM
    DAI, DX
    ZHU, FR
    DAVOLI, I
    STIZZA, S
    [J]. APPLIED SURFACE SCIENCE, 1992, 59 (3-4) : 195 - 199
  • [15] Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin films
    Das, VD
    Kirupavathy, S
    Damodare, L
    Lakshminarayan, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8521 - 8530
  • [16] ANALYSIS AND IMPROVEMENT OF KELVIN METHOD FOR MEASURING DIFFERENCES IN WORK FUNCTION
    DEBOER, JSW
    KRUSEMEY.HJ
    JASPERS, NCB
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (08) : 1003 - 1008
  • [17] ACCURATE AND VERSATILE VIBRATING CAPACITOR FOR SURFACE AND ADSORPTION STUDIES
    ENGELHARDT, HA
    FEULNER, P
    PFNUR, H
    MENZEL, D
    [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11): : 1133 - 1136
  • [18] Surface treatment of indium-tin-oxide substrates and its effects on initial nucleation processes of diamine films
    Fujita, S
    Sakamoto, T
    Ueda, K
    Ohta, K
    Fujita, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A): : 350 - 353
  • [19] EFFECT OF SUBSTRATE-TEMPERATURE ON ULTRAHIGH-VACUUM INTERFACES OF INDIUM OXIDE GAAS(110)
    GOLAN, A
    SHAPIRA, Y
    EIZENBERG, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 567 - 571
  • [20] ULTRAHIGH-VACUUM STUDY OF INDIUM OXIDE GAAS(110) INTERFACES
    GOLAN, A
    SHAPIRA, Y
    EIZENBERG, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 925 - 930