Enhanced mobility of Cu4SnS4 films prepared by annealing SnS-CuS stacks in a graphite box

被引：18

作者：

Chalapathi, U. ^{[1
]}

Poornaprakash, B. ^{[1
]}

Park, Si-Hyun ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Elect Engn, Gyongsan 38541, South Korea

来源：

SOLAR ENERGY | 2017年 / 155卷

关键词：

Cu4SnS4 thin films; Chemical bath deposition; X-ray diffraction; Raman analysis; Electrical properties; IONIC LAYER ADSORPTION; CU3SNS4; THIN-FILMS; OPTICAL-PROPERTIES; CU2SNS3;

D O I：

10.1016/j.solener.2017.06.051

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-quality Cu4SnS4 thin films are prepared by annealing chemical bath-deposited SnS-CuS stacks in a graphite box. The effects of annealing temperature on the grain growth and morphology of these films are investigated in this study. Results showed that the films prepared at 500-580 degrees C yielded an orthorhombic crystal structure with lattice parameters a = 1.371 nm, b = 0.766 nm and c = 0.643 nm, a crystallite size of 260 nm, an increased grain size from 2 mu m to greater than 6 gm, a direct optical band gap of 1.0 eV, and p-type electrical conductivity. The films prepared at 550 degrees C and 580 degrees C exhibited a relatively high hole mobility of 150 cm(2)V(-1)s(-1). These properties suggest that the films developed in this study can yield reasonable device efficiency when used as solar cell absorber layers. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：336 / 341

页数：6

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