Research on temperature characteristic of parasitic capacitance in MEMS capacitive accelerometer

被引:23
作者
Dong, Xianshan [1 ]
Huang, Qinwen [1 ]
Xu, Wei [2 ]
Tang, Bin [2 ]
Yang, Shaohua [1 ]
Zhu, Junhua [1 ]
En, Yunfei [1 ]
机构
[1] Minist Ind & Informat Technol, Elect Res Inst 5, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Guangdong, Peoples R China
[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
MEMS accelerometer; Parasitic capacitance; Temperature characteristic; Bias drift;
D O I
10.1016/j.sna.2018.12.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In MEMS capacitive accelerometer, parasitic capacitance is a serious problem, and its change over temperature would deteriorate performance of MEMS accelerometer. Yet, the temperature characteristic of parasitic capacitance hasn't got enough research. In this work, the parasitic capacitance and its effect on bias drift are quantificationally studied over temperature. The results of MEMS comb-finger and sandwich accelerometers show that parasitic capacitance affects bias temperature drift seriously and it can even become main factor. Moreover, contribution of the parasitic capacitance on bias drift is separated from other factors for the first time, and new methods of decreasing the drift of bias and nonlinearity are proposed. This work provides a new way for the research on bias drift of closed-loop MEMS capacitive accelerometer and is helpful for improving temperature performance of capacitive accelerometer. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:581 / 587
页数:7
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