Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm2 V-1 s-1

被引：179

作者：

Paterson, Alexandra F. ^{[1
,2
]}

Treat, Neil D. ^{[3
]}

Zhang, Weimin ^{[4
]}

Fei, Zhuping ^{[2
,5
]}

Wyatt-Moon, Gwenhivir ^{[1
,2
]}

Faber, Hendrik ^{[1
,2
]}

Vourlias, George ^{[6
]}

Patsalas, Panos A. ^{[6
]}

Solomeshch, Olga ^{[7
]}

Tessler, Nir ^{[7
]}

Heeney, Martin ^{[2
,5
]}

Anthopoulos, Thomas D. ^{[1
,2
]}

机构：

[1] Imperial Coll London, Dept Phys, London SW7 2AZ, England

[2] Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England

[3] Imperial Coll London, Dept Mat, London SW7 2AZ, England

[4] Guangxi Univ Nationalities, Coll Chem & Chem Engn, Nanning 530006, Peoples R China

[5] Imperial Coll London, Dept Chem, London SW7 2AZ, England

[6] Aristotle Univ Thessaloniki, Appl Phys Lab, Dept Phys, GR-54124 Thessaloniki, Greece

[7] Technion Israel Inst Technol, Dept Elect Engn, Sara & Moshe Zisapel Nanoelect Ctr, IL-3200 Haifa, Israel

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 35期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; SEMICONDUCTING POLYMERS; SOLVENT; MORPHOLOGY;

D O I：

10.1002/adma.201601075

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A ternary organic semiconducting blend composed of a small-molecule, a conjugated polymer, and a mole cular p-dopant is developed and used in solution-processed organic transistors with hole mobility exceeding 13 cm(2) V-1 s(-1) (see the Figure). It is shown that key to this development is the incorporation of the p-dopant and the formation of a vertically phase-separated film microstructure.

引用

页码：7791 / +

页数：9

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