InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant

被引：6
|
作者：
Ji, W. Y. [1 ,2 ]
Gu, Y. [1 ]
Zhang, Y. G. [1 ]
Ma, Y. J. [1 ]
Chen, X. Y. [1 ]
Gong, Q. [1 ]
Du, B. [1 ,2 ]
Shi, Y. H. [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
APPLIED OPTICS | 2017年 / 56卷 / 31期
关键词：
VAPOR-PHASE EPITAXY; MU-M; GROWTH; TELLURIUM; BI;
D O I：
10.1364/AO.56.000H10
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An InP-based 2.1 mu m InAs/In0.53Ga0.47As triangular quantum well laser grown with Bi surfactant has shown improved performance in comparison to the device with the same structure but grown without Bi surfactant. Under continuous-wave driving operation, the output light power is increased from 32.6 to 37.5 mW at the same injecting current of 850 mA at 200 K. The external differential and internal quantum efficiencies for the laser with Bi surfactant are 18.4% and 41%, respectively, which are correspondingly higher than 13.1% and 31% for the reference device. Furthermore, a decreased internal loss from 20.9 to 17.6 cm(-1) for the Bi surfactant laser is also observed. These results suggest that Bi surfactant is promising for further enhancing performances of strained quantum well laser diodes. (C) 2017 Optical Society of America
引用
收藏
页码：H10 / H14
页数：5
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