Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors

被引:11
作者
Cho, Sanghyun [1 ]
Kim, Seohan [1 ]
Kim, Doyeong [1 ]
Yi, Moonsuk [2 ]
Byun, Junseok [3 ]
Song, Pungkeun [1 ]
机构
[1] Pusan Natl Univ, Dept Mat Sci & Engn, Busan 46241, South Korea
[2] Pusan Natl Univ, Dept Elect Engn, Busan 46241, South Korea
[3] Ukseong Chem Co, Busan 46259, South Korea
基金
新加坡国家研究基金会;
关键词
TFT channel layer; amorphous transparent conductive oxide semiconductor; magnetron sputtering; change with time; indium-gallium-zinc-oxide; GATE-BIAS; TRANSPARENT; CRYSTALLINE;
D O I
10.3390/coatings9010044
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous In-Ga-Zn-O (a-IGZO) has been studied as a channel layer in thin-film transistors (TFTs). To improve the bias-induced instability of a-IGZO TFTs, we introduced yttrium with high bond enthalpy by magnetron co-sputtering system. The Y-doped a-IGZO (a-IGZO:Y) films show relatively lower carrier concentration and higher Hall mobility, which is due to the suppression of oxygen vacancies caused by Y doping. The a-IGZO:Y showed a relatively higher transmittance in the visible light region compared to non-doped IGZO, which could be due to the decrease of shallow defect levels caused by oxygen vacancy in the band gap. The a-IGZO without Y doping showed dramatic changes in electrical properties as times progressed (over 240 h); however, the a-IGZO:Y showed no significant changes. The a-IGZO:Y TFTs demonstrated a more stable driving mode as exhibited in the positive gate bias stress test even though the values of V-TH and SS were slightly degraded.
引用
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页数:8
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