Internal Electric Field Behavior of Cadmium Zinc Telluride Radiation Detectors Under High Carrier Injection

被引：0

作者：

Yang, G. ^{[1
]}

Bolotnikov, A. E. ^{[1
]}

Camarda, G. S. ^{[1
]}

Cui, Y. ^{[1
]}

Hossain, A. ^{[1
]}

Kim, K. H. ^{[1
]}

Gul, R. ^{[1
]}

James, R. B. ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 08期

关键词：

CZT; Pockels effect; electric field; hole trapping; polarization; CHARGE COLLECTION;

D O I：

10.1007/s11664-011-1656-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of the internal electric field of nuclear-radiation detectors substantially affects detector performance. We investigated the distribution of the internal field in cadmium zinc telluride (CZT) detectors under high carrier injection. We noted the build-up of a space-charge region near the cathode that produces a built-in field opposing the applied field. Its presence entails the collapse of the electric field in the rest of the detector, other than the portion near the cathode. Such a space-charge region originates from serious hole trapping in CZT. The device's operating temperature greatly affects the width of the space-charge region. With increasing temperature from 5A degrees C to 35A degrees C, its width expanded from about one-sixth to one-half of the total depth of the detector.

引用

页码：1689 / 1692

页数：4

共 9 条

[1] Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation:: Application to semi-insulating Cd1-xZnxTe [J].