Resistive switching: An investigation of the bipolar-unipolar transition in Co-doped ZnO thin films

被引：6
|
作者：
Santos, Daniel A. A. [1 ,2 ]
Zeng, Hao [2 ]
Macedo, Marcelo A. [1 ]
机构：
[1] Univ Fed Sergipe, Dept Phys, BR-49100000 Sao Cristovao, Sergipe, Brazil
[2] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
来源：
MATERIALS RESEARCH BULLETIN | 2015年 / 66卷
关键词：
Oxides; Semiconductors; Thin films; Sputtering; Electrical properties; CONDUCTING FILAMENT; RESISTANCE; SRTIO3;
D O I：
10.1016/j.materresbull.2015.02.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：147 / 150
页数：4
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